SiGeCÕSi superlattice microcoolers
نویسندگان
چکیده
Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3v method. SiGeC/Si superlattice microcoolers with dimensions as small as 40340 mm were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm. © 2001 American Institute of Physics. @DOI: 10.1063/1.1356455#
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